Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Identifieur interne : 00DE26 ( Main/Repository ); précédent : 00DE25; suivant : 00DE27Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Auteurs : RBID : Pascal:02-0474047Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/cm2, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (ηinj∼97%). © 2002 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00E851
Links to Exploration step
Pascal:02-0474047Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers</title><author><name sortKey="Tansu, Nelson" uniqKey="Tansu N">Nelson Tansu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author><author><name sortKey="Kirsch, Nicholas J" uniqKey="Kirsch N">Nicholas J. Kirsch</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author><author><name sortKey="Mawst, Luke J" uniqKey="Mawst L">Luke J. Mawst</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0474047</idno><date when="2002-09-30">2002-09-30</date><idno type="stanalyst">PASCAL 02-0474047 AIP</idno><idno type="RBID">Pascal:02-0474047</idno><idno type="wicri:Area/Main/Corpus">00E851</idno><idno type="wicri:Area/Main/Repository">00DE26</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD coatings</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8115G</term><term>8535B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Revêtement MOCVD</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Metalorganic chemical vapor deposition-grown In<sub>0.4</sub>Ga<sub>0.6</sub>As<sub>0.995</sub>N<sub>0.005</sub> quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm<sup>2</sup> (for L=2000 μm) and 75 A/cm<sup>2</sup>, respectively. The utilization of a tensile-strained GaAs<sub>0.67</sub>P<sub>0.33</sub> buffer layer and GaAs<sub>0.85</sub>P<sub>0.15</sub> barrier layers allows a highly-compressively-strained In<sub>0.4</sub>Ga<sub>0.6</sub>As<sub>0.995</sub>N<sub>0.005</sub> QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (η<sub>inj</sub>∼97%). © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers</s1></fA08><fA11 i1="01" i2="1"><s1>TANSU (Nelson)</s1></fA11><fA11 i1="02" i2="1"><s1>KIRSCH (Nicholas J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAWST (Luke J.)</s1></fA11><fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2523-2525</s1></fA20><fA21><s1>2002-09-30</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0474047</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Metalorganic chemical vapor deposition-grown In<sub>0.4</sub>Ga<sub>0.6</sub>As<sub>0.995</sub>N<sub>0.005</sub> quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm<sup>2</sup> (for L=2000 μm) and 75 A/cm<sup>2</sup>, respectively. The utilization of a tensile-strained GaAs<sub>0.67</sub>P<sub>0.33</sub> buffer layer and GaAs<sub>0.85</sub>P<sub>0.15</sub> barrier layers allows a highly-compressively-strained In<sub>0.4</sub>Ga<sub>0.6</sub>As<sub>0.995</sub>N<sub>0.005</sub> QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (η<sub>inj</sub>∼97%). © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F18</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Revêtement MOCVD</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>MOCVD coatings</s0></fC03><fN21><s1>273</s1></fN21><fN47 i1="01" i2="1"><s0>0239M000083</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00DE26 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00DE26 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:02-0474047
|texte= Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
}}
| This area was generated with Dilib version V0.5.77. |  |